j.s.t.i.s.u , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BDX33 description ? collector-emitter sustaining voltage- : vceo(sus)= 45v(min) ? high dc current gain : hfe= 750(min) @lc= 4a ? low collector saturation voltage : vce(satr 2.5v(max.)@ |c= 4a ? complement to type bdx34 applications ? designed for general purpose amplifier and low speed switching applications. absolute maximum ratings(ta=25r) symbol vcbo vceo vebo ic icm ib pc t, "^stg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value 45 45 5 10 15 0.25 70 150 -65-150 unit v v v a a a w "c c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 1.78 unit c/w 1 i ' . 1, i 7 ^ 1 pin 2 -k .. x ^ 3 1.base 2. collector 3. emitter to-220c package i u i a*-'" j j ? b ?? "*n v ' ^i &[ mloov 1 h ?r ~v k t ?h c i t ,"f it" ,*w? d rr pin a b c d f g h j k l q r s u v mm min 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1. 10 2.70 2.50 1.29 6.45 8.66 majl 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.8*5 r ?? pw *i **" if "^ 5 oo y quality semi-conductors
silicon npn darlington power transistor BDX33 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat) vee(on) iobo iceo iebo hfe parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain conditions lc= 100ma; ib= 0 lc= 4a; ib= 8ma |c= 4a ; vce= 3v vcb= 45v; ie= 0 vce= 22v; ib= 0 veb= 5v; lc= 0 lc= 4a; vce= 3v min 45 750 typ. max 2.5 2.5 0.2 0.5 10 unit v v v ma ma ma
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